Overview
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
- | Author: Koichiro Ishibashi
- | Publisher: Springer
- | Publication Date: Aug 18, 2011
- | Number of Pages: 144 pages
- | Binding: Hardback or Cased Book
- | ISBN-10: 3642195679
- | ISBN-13: 9783642195679
