Ionizing Radiation Effects in Mos Devices and Circuits

This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.

• | Author: T. P. Ma
• | Publisher: Wiley-Interscience
• | Publication Date: Apr 18, 1989
• | Number of Pages: 608 pages
• | Binding: Hardback or Cased Book
• | ISBN-10: 047184893X
• | ISBN-13: 9780471848936