III-Nitride Materials: Properties, Growth, and Applications

Ⅲ-nitride materials possess superior optical and electrical properties due to direct bandgap and polarization effects. Light-emitting devices are already common in daily lighting, traffic signage, landscape lighting, etc. Additionally, they hold promise for next-generation displays, e.g., microLED displays, as well as field effect transistors (FETs), for example, high electron mobility transistors (HEMTs) and p-channel FETs. The investigation of antipolar (N-polar) epitaxy and devices is also flourishing. The following Special Issue reprint gathers research achievements related to III-nitride materials and their associated devices, covering growth methods, device fabrication technology, structural design, and physical mechanisms of III-nitride semiconductors, devices, etc.

• | Author: Yangfeng Li
• | Publisher: Mdpi AG
• | Publication Date: Sep 25, 2024
• | Number of Pages: 114 pages
• | Binding: Hardback or Cased Book
• | ISBN-10: 3725821070
• | ISBN-13: 9783725821075