III-Nitride Electronic Devices (Volume 102) (Semiconductors and Semimetals, Volume 102)

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

• | Author: Rongming Chu, Keisuke Shinohara
• | Publisher: Academic Press
• | Publication Date: Oct 18, 2019
• | Number of Pages: 546 pages
• | Language: English
• | Binding: Hardcover
• | ISBN-10: 0128175443
• | ISBN-13: 9780128175446