Silicon-Germanium Heterojunction Bipolar Transistors

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

• | Author: John D. Cressler
• | Publisher: Artech Print on Demand
• | Publication Date: December 31, 2002
• | Number of Pages: 589 pages
• | Language: English
• | Binding: Hardcover
• | ISBN-10: 1580533612
• | ISBN-13: 9781580533614