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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics, 131)
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics And Applications (Topics In Applied Physics, 131)

Springer
SKU:
9789811512148
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ISBN13:
9789811512148
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Description
  • | Author: Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
  • | Publisher: Springer
  • | Publication Date: Mar 24, 2021
  • | Number of Pages: 439 pages
  • | Language: English
  • | Binding: Paperback
  • | ISBN-10: 9811512140
  • | ISBN-13: 9789811512148
Additional Information
Author:
Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
Publisher:
Springer
Publication Date:
Mar 24, 2021
Number of pages:
439 pages
Language:
English
Binding:
Paperback
ISBN-10:
9811512140
ISBN-13:
9789811512148
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